High-performance silicon nitride ceramic materials developed for the aluminum industry has significantly improved thermal and mechanical properties than similar products. On this basis, the "L-shaped high thermal conductivity submerged heating "Appliance" will bring revolutionary progress to aluminum industrial equipment.
High thermal conductivity submerged heater
High thermal conductivity submersible heaters (including L-type) subvert the installation and application scenarios of traditional electric heaters in the aluminum industry. Its characteristics are: small size, high power, high efficiency, long life, and easy maintenance. It solves the problem of electric heating in aluminum industry. The pain points and difficulties in the field for a long time.The heater is small in size and high in power, the size of the silicon nitride sheath is ∮38-68㎜, and the heating power covers 3.5-28KW;
Advantage:
- Because the heater is filled with high thermal conductivity materials, the heating efficiency is as high as 99%.
- Compared with traditional electric heaters, it can save electricity by 30%-50%, and its service life is greatly extended
- Installation and maintenance are very convenient, and allow rapid heating and use in air-fired ovens, making it safer to use.
Silicon Nitride Related Data
| Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 |
Physical
Property | Density | g/cm3 | 3.9 | 3.1 | 6 | 3.2 |
| Water Absorption | % | 0 | 0.1 | 0 | 0.1 |
| Sinter Temperature | °C | 1700 | 2200 | 1500 | 1800 |
Mechanical
Property | Rockwell Hardness | HV | 1700 | 2200 | 1300 | 1400 |
| Bend Strength | kgf/mm2 | 3500 | 4000 | 9000 | 7000 |
| Compression Intensity | Kgf/mm2 | 30000 | 20000 | 20000 | 23000 |
Thermal
Property | Maximum working
temperature | °C | 1500 | 1600 | 1300 | 1400 |
thermal expansion
coefficient
0-1000°C | /°C | 8.0*10-6 | 4.1*10-6(0-500°C) | 9.5*10-6 | 2.0*10-6(0-500°C) |
| 5.2*10-6(500-1000°C) | 4.0*10-6(500-1000°C) |
| Thermal Shock resistance | T(°C) | 200 | 250 | 300 | 400-500 |
| Thermal Conductivity | W/m.k(25°C | 31 | 100 | 3 | 25 |
| 300°C) | 16 | 100 | 3 | 25 |
Electrical
Property | Resisting rate of Volume | ◎.cm | | | | |
| 20°C | >1012 | 106-108 | >1010 | >1011 |
| 100°C | 1012-1013 | – | – | >1011 |
| 300°C | >1012 | – | – | >1011 |
Insulation Breakdown
Intensity | KV/mm | 18 | semiconductor | 9 | 17.7 |
| Dielectric Constant (1 MHz) | (E) | 10 | – | 29 | 7 |
| Dielectric Dissipation | (tg o) | 0.4*10-3 | – | – | – |
