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CE Silicon Nitride Degassing Rotor

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CE Silicon Nitride Degassing Rotor

Brand Name : ZG

Model Number : MS

Certification : CE

Place of Origin : CHINA

MOQ : 1 piece

Price : Negotiation

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram, MoneyGram

Supply Ability : 10000 pieces per month

Delivery Time : 5-8 working days

Packaging Details : Strong wooden box for global shipping

Material : Silicon Nitride Si3N4

Size : Customized

Color : Black

Features : high hardness; high corrosion resistance; low density; stability in a wide range of temperatures; precision machining capability.

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Silicon Nitride (Si3N4) Degassing Rotor

In order to remove the hydrogen in the aluminum liquid, a hollow silicon nitride rotor is used to feed nitrogen or argon, and the dispersed gas is stirred at a high speed to achieve the neutralization and discharge of hydrogen.

CE Silicon Nitride Degassing RotorCE Silicon Nitride Degassing Rotor

Advantage:

  • Compared with graphite rotors, silicon nitride will not be oxidized in high temperature environments, so it will not pollute the aluminum liquid and has a longer service life;

  • High thermal shock resistance ensures that the rotor will not break during frequent intermittent operation;
  • The high-temperature strength of silicon nitride is high, which ensures that the rotor runs smoothly at high speeds.

CE Silicon Nitride Degassing Rotor

Silicon Nitride Related Data

Main component 99%Al2O3 S-SiC ZrO2 Si3N4
Physical
Property
Density g/cm3 3.9 3.1 6 3.2
Water Absorption % 0 0.1 0 0.1
Sinter Temperature °C 1700 2200 1500 1800
Mechanical
Property
Rockwell Hardness HV 1700 2200 1300 1400
Bend Strength kgf/mm2 3500 4000 9000 7000
Compression Intensity Kgf/mm2 30000 20000 20000 23000
Thermal
Property
Maximum working
temperature
°C 1500 1600 1300 1400
thermal expansion
coefficient
0-1000°C
/°C 8.0*10-6 4.1*10-6(0-500°C) 9.5*10-6 2.0*10-6(0-500°C)
5.2*10-6(500-1000°C) 4.0*10-6(500-1000°C)
Thermal Shock resistance T(°C) 200 250 300 400-500
Thermal Conductivity W/m.k(25°C 31 100 3 25
300°C) 16 100 3 25
Electrical
Property
Resisting rate of Volume ◎.cm        
20°C >1012 106-108 >1010 >1011
100°C 1012-1013 >1011
300°C >1012 >1011
Insulation Breakdown
Intensity
KV/mm 18 semiconductor 9 17.7
Dielectric Constant (1 MHz) (E) 10 29 7
Dielectric Dissipation (tg o) 0.4*10-3

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