Advantages:
- Excellent chemical stability,reduces impurity'bring in,improved the quality of aluminum casting products.
- High temperature resistance,which remain the same strength and hardness when the temperature of aluminum liquid comes to 800℃-900℃.
- High density with low porosity,it can be long-term using in aluminum liquid,which decrease the residue,in order to improve the service life and reduce the maintenance cost.
- It is non-wetting to aluminum liquid,which can highly reduce the aluminum attachment on the surface of the tube.
- Excellent resistance to thermal shock,which can improve the working life
Due to the high density with low porosity, high temperature stability,excellent resistance to thermal shock and excellent corrosion resistance,silicon nitride material has a very broad application prospects in the cast aluminum industry on equipment parts.Currently,Our company has developed andproduced series of high performance silicon nitride ceramic products for cast aluminum industry using,including silicon nitride riser tube,silicon nitride heater protection tube,rotating shaft,rotor and silicon nitride protection tube for thermocouple,etc..
Silicon Nitride Related Data
| Main component | 99%Al2O3 | S-SiC | ZrO2 | Si3N4 |
Physical
Property | Density | g/cm3 | 3.9 | 3.1 | 6 | 3.2 |
| Water Absorption | % | 0 | 0.1 | 0 | 0.1 |
| Sinter Temperature | °C | 1700 | 2200 | 1500 | 1800 |
Mechanical
Property | Rockwell Hardness | HV | 1700 | 2200 | 1300 | 1400 |
| Bend Strength | kgf/mm2 | 3500 | 4000 | 9000 | 7000 |
| Compression Intensity | Kgf/mm2 | 30000 | 20000 | 20000 | 23000 |
Thermal
Property | Maximum working
temperature | °C | 1500 | 1600 | 1300 | 1400 |
thermal expansion
coefficient
0-1000°C | /°C | 8.0*10-6 | 4.1*10-6(0-500°C) | 9.5*10-6 | 2.0*10-6(0-500°C) |
| 5.2*10-6(500-1000°C) | 4.0*10-6(500-1000°C) |
| Thermal Shock resistance | T(°C) | 200 | 250 | 300 | 400-500 |
| Thermal Conductivity | W/m.k(25°C | 31 | 100 | 3 | 25 |
| 300°C) | 16 | 100 | 3 | 25 |
Electrical
Property | Resisting rate of Volume | ◎.cm | | | | |
| 20°C | >1012 | 106-108 | >1010 | >1011 |
| 100°C | 1012-1013 | – | – | >1011 |
| 300°C | >1012 | – | – | >1011 |
Insulation Breakdown
Intensity | KV/mm | 18 | semiconductor | 9 | 17.7 |
| Dielectric Constant (1 MHz) | (E) | 10 | – | 29 | 7 |
| Dielectric Dissipation | (tg o) | 0.4*10-3 | – | – | – |
